http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SCG4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 1 of 4 n3 = date code rohs compliant product a suffix of -c specifies halogen and lead-free description these miniature surface mount mosfets utilize a hig h cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. mechanical data trench technology supper high density cell design excellent on resistance extremely low threshold voltage application dc-dc converter circuit load switch marking package information package mpq leader size sot-523 3k 7 inch maximum ratings (t a = 25c unless otherwise specified) rating parameter symbol 10s steady state unit drain C source voltage v ds 20 v gate C source voltage v gs 6 v t a = 25c 0.88 0.8 continuous drain current 1 t a = 70c i d 0.71 0.64 a t a = 25c 0.37 0.3 power dissipation 1 t a = 70c p d 0.23 0.19 w t a = 25c 0.76 0.69 continuous drain current 2 t a = 70c i d 0.6 0.55 a t a = 25c 0.27 0.22 power dissipation 2 t a = 70c p d 0.17 0.14 w pulsed drain current 3 i dm 1.4 a lead temperature t l 260 c operating junction & storage temperature range t j , t stg 150, -55~150 c sot-523 top view a l m c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 1.5 1.7 g - 0.1 b 1.45 1.75 h 0.55 ref. c 0.7 0.9 j 0.1 0.2 d 0.7 0.9 k - e 0.9 1.1 l 0.5 typ. f 0.15 0.35 m 0.25 0.325 top view
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SCG4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 2 of 4 thermal resistance ratings note: 1. surface mounted on fr4 board using 1 square inch pad size, 1oz copper. 2. surface mounted on fr4 board using minimum pad s ize, 1oz copper 3. repetitive rating, pulse width limited by juncti on temperature, tp=10 s, duty cycle=1% 4. repetitive rating, pulse width limited by juncti on temperature t j =150c. electrical characteristics (t a =25c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static drain-source breakdown voltage v (br)dss 20 - - v v gs =0, i d =250 a zero gate voltage drain current i dss - - 1 a v ds =16v, v gs =0 gate-source leakage i gss - - 5 a v ds =0 , v gs = 5v gate-threshold voltage v gs(th) 0.45 0.55 1 v v ds =v gs, i d =250 a - 220 310 v gs =4.5v, i d =0.55a - 260 360 v gs =2.5v, i d =0.45a drain-source on resistance r ds(on) - 320 460 m v gs =1.8v, i d =0.35a forward transconductance g fs - 1 - s v ds =10v, i d =0.4a body-drain diode ratings diode forward onCvoltage v sd 0.5 0.7 1.5 v i s =350ma, v gs =0 dynamic characteristics input capacitance c iss - 68 - output capacitance c oss - 9 - reverse transfer capacitance c rss - 7.5 - pf v ds =10v, v gs =0, f=100khz total gate charge q g(tot) - 1.15 - threshold gate charge q g(th) - 0.06 - gate-to-source charge q gs - 0.15 - gate-to-drain charge q gd - 0.23 - nc v ds =10v, v gs =4.5v, i d =0.55a turn-on delay time t d(on) - 22 - rise time t r - 80 - turn-off delay time t d(off) - 700 - fall time t f - 380 - ns v dd =10v, i d =0.55a, v gs =4.5v, r g =6 . rating parameter symbol typ. max. unit t Q 10s 285 335 junction-to-ambient thermal resistance 1 steady state r ja 340 405 t Q 10s 385 450 junction-to-ambient thermal resistance 2 steady state r ja 455 545 junction-to-case thermal resistance steady state r jc 260 300 c / w
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SCG4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 3 of 4 characteristic curves
http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. elektronische bauelemente SCG4153 0.8a , 20v , r ds(on) 310 m ? n-channel enhancement mode mosfet 12-mar-2013 rev. a page 4 of 4 characteristic curves
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